Job Description Insight Global is looking for a Principal RF Architect that will be working on site in Austin, TX and support a public-private partnership of preeminent semiconductor systems and defense electronics companies, national labs, and academic institutions. Their mission is to advance the state-of-the-art in critical semiconductor domains such as advanced packaging, and in the process to help restore U.S. leadership in semiconductor manufacturing. They are developing cutting-edge semiconductor manufacturing equipment and processes that will define future roadmaps of semiconductor logic, memory, heterogenous integration, chip cooling, etc. They are Backed by $1.4 billion in combined funding from DARPA, Texas state initiatives, and strategic partners, they are building foundational capabilities in advanced packaging and integrated design infrastructure to restore U.S. leadership in microelectronics manufacturing. Responsibilities Architect RF and mixed-signal microsystems operating across K-band (18–27 GHz), Ka-band (27–40 GHz), and W-band (75–110 GHz) for high-performance, low-latency communication, radar, and sensing applications. Define and drive RF front-end architectures, including LNAs, PAs, mixers, phase shifters, and T/R modules, optimized for 3.0D integration and advanced packaging flows. Collaborate with device, packaging, and digital architects to achieve co-optimization of RF, thermal, and mechanical performance within heterogeneous multi-die systems. Lead EM/circuit co-simulation and system-level modeling using tools such as HFSS, ADS, AWR, or CST to validate and tune design performance across process corners and temperature. Oversee RF testing, characterization, and calibration at wafer, die, and module levels—developing test plans, de-embedding strategies, and measurement automation for K/W-band hardware. Engage with foundry, EDA, and metrology partners to define design enablement requirements for next-generation RF packaging (e.g., hybrid bonding, AiP, glass/Si interposers). Author technical documentation, reference designs, and design guidelines to accelerate ecosystem adoption of their 3.0D RF microsystems platform. We are a company committed to creating diverse and inclusive environments where people can bring their full, authentic selves to work every day. We are an equal opportunity/affirmative action employer that believes everyone matters. Qualified candidates will receive consideration for employment regardless of their race, color, ethnicity, religion, sex (including pregnancy), sexual orientation, gender identity and expression, marital status, national origin, ancestry, genetic factors, age, disability, protected veteran status, military or uniformed service member status, or any other status or characteristic protected by applicable laws, regulations, and ordinances. If you need assistance and/or a reasonable accommodation due to a disability during the application or recruiting process, please send a request to HR@insightglobal.com.To learn more about how we collect, keep, and process your private information, please review Insight Global's Workforce Privacy Policy: https://insightglobal.com/workforce-privacy-policy/. Skills and Requirements M.S. in Electrical Engineering, Applied Physics, or related discipline focused on RF, microwave, or millimeter-wave design. At least 8 years of hands-on experience designing, simulating, and testing RF/microwave ICs or modules (K-band and above). Deep expertise in S-parameter characterization, on-wafer measurements, vector network analysis, and de-embedding methodologies. Proficiency with RF simulation and design tools such as Keysight ADS, Ansys HFSS, Cadence AWR, CST Studio, or equivalent. Strong understanding of electromagnetic effects in packaging—signal integrity, coupling, and loss across interposers and redistribution layers. Proven track record in RF testing automation, data analysis, and test correlation between EM models and measured results. Ability to work cross-functionally with device, packaging, EDA, and system teams in a fast-moving R&D environment. Ph,D. in Electrical Engineering, Applied Physics, or related discipline focused on RF, microwave, or millimeter-wave design. More than 8 years of hands-on experience designing, simulating, and testing RF/microwave ICs or modules (K-band and above). Experience developing Antenna-in-Package (AiP), RFIC/SiP, or 3D-stacked RF front-end modules for advanced communications or sensing. Familiarity with 3DHI design flows and RF/mixed-signal co-simulation using advanced EDA environments (Cadence, Synopsys, Siemens, Ansys). Hands-on experience with wafer-level probing, cryogenic testing, or thermal-vacuum characterization for high-frequency systems. Knowledge of GaAs, GaN, SiGe, or CMOS RF processes, and packaging constraints for high-frequency operation Publication or patent record in millimeter-wave circuits, antennas, or RF packaging. Strong technical writing and presentation skills for industry and defense-sector collaborations.